380ma n-channel small signal mosfet - 60v 2n7002klt1 primary characteristics sot -23 package features applications 60 v 2.3 @ 10 v r ds(on) max v (br)dss 2.7 @ 5.0 v i d max (note 1) 380 ma gate source drain 3 2 1 (top view) simplified schematic w = device code w =month code marking diagram & pin assignment 3 2 1
rk rk ?? we declare that the material of product are halogen free and compliance with rohs requirements. ? ( 6 ' 3 u r w h f w h g ? / r z 5 ' 6 r q ? 6 x u i d f h 0 r x q w 3 d f n d j h ? 7 k l v l v d 3 e ) u h h ' h y l f h ? / r z 6 l g h / r d g 6 z l w f k ? / h y h o 6 k l i w & l u f x l w v ? ' & ' & & r q y h u w h u ? 3 r u w d e o h $ s s o l f d w l r q v l h ' 6 & 3 ' $ & h o o 3 k r q h h w f maximum ratings (t j = 25 c unless otherwise stated) stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit junction ?to? ambient ? steady state (note 1) r ja 417 c/w junction ? to? ambient ? t 5 s (note 1) r ja 300 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 2014.11 www.willas.com.tw rev. >0 p 1 60 v 20 v 320 230 380 270 p d 300 420 1.5 a c 300 t l 260 c 2000 v drain ? to ? source voltage gate? to? source voltage i d drain current (note 1) steady state t a = 25 c t a = 85 c t < 5 s t a = 25 c t a = 85 c pulsed drain current (t p = 10 s) t j , t stg i s ? 55 to +150 i dm gate? source esd rating (hbm, method 3015) rating symbol value unit ma ma mw power dissipation (note 1) steady state t < 5 s v dss v gs operating junction and storage temperature range source current (body diode) lead temperature for soldering purposes (1/8 from case for 10 s) esd
electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain ? to? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain ? to? source breakdown voltage temperature coefficient v (br)dss /t j 71 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1 a t j = 125 c 500 v gs = 0 v, v ds = 50 v t j = 25 c 100 na gate? to? source leakage current i gss v ds = 0 v, v gs = 20 v 10 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.0 2.5 v negative threshold temperature coefficient v gs(th) /t j 4.0 mv/ c drain? to? source on resistance r ds(on) v gs = 10 v, i d = 500 ma 2.3 v gs = 5.0 v, i d = 50 ma 2.7 forward transconductance g fs v ds = 5 v, i d = 200 ma 80 ms charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 25 v pf output capacitance c oss reverse transfer capacitance c rss total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v; i d = 500 ma nc threshold gate charge q g(th) gate? to? source charge q gs gate? to? drain charge q gd switching characteristics, v gs = v (note 3) turn ? on delay time t d(on) ns rise time t r turn ? off delay time t d(off) fall time t f drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 115 ma t j = 25 c 1.4 v t j = 85 c 0.7 2. pulse test: pulse width 300 s, duty cycle 2% 3. switching characteristics are independent of operating junction temperatures 34 3 2.2 0.71 0.1 0.32 0.16 3.8 3.4 19 12 v ds = 10 v, v gen = 10 v, i d = 500 ma 2014.11 www.willas.com.tw rev. >0 380ma n-channel small signal mosfet - 60v 2n7002klt1 p 2
typical electrical characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0 4.0 v 3.0 v v gs = 5,6,7.8,9.10 v 0123456 0.0 0.1 0.2 0.3 0.4 t j =125 o c t j =25 o c t j =-55 o c 0.10.20.30.40.50.60 .70.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t j = 125 o c t j = 85 o c t j = 25 o c v gs = 5.0v t j = -55 o c 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t j = 125 o c t j = 85 o c t j = 25 o c v gs = 10v t j = -55 o c figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ?to ? source voltage (v) i d , drain current (a) i d , drain current (a) figure 3. on? resistance vs. drain current and temperature figure 4. on ? resistance vs. drain current and temperature i d , drain current (a) r ds(on) , drain? to ? source resistance ( ) i d , drain current (a) r ds(on) , drain? to ? source resistance ( ) 2014.11 www.willas.com.tw rev. >0 380ma n-channel small signal mosfet - 60v 2n7002klt1 p 3
typical electrical characteristics 12345678910 1 2 3 4 5 6 7 8 9 10 i d = 0.5 a -50 -25 0 25 50 75 100 125 1 50 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs = 5.0 v v gs = 10 v r on 10v@t j = 25 o c: 2.3 r on 5.0v@t j = 25 o c: 2.7 i d = 0.5 a figure 5. on ? resistance vs. gate ? to? source voltage figure 6. on ? resistance variation with temperature v gs , gate ?to ? source voltage (v) t j , junction temperature ( c) r ds(on) , drain? to ? source resistance ( ) r ds(on) , drain? to ?source resistance (normalized) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45 50 55 60 frequency = 1 mhz crss coss ciss 0.0 0.1 0.2 0.3 0.4 0. 5 0.6 0.7 0.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ds = 10 v i ds = 0.5 a figure 7. capacitance variation figure 8. gate ? to? source and drain? to? source voltage vs. total charge qg, total gate charge (nc) v gs , gate ?to ? source voltage (v) c, capacitance (pf) gate ?to ? source or drain? to ? source voltage (v) 2014.11 >0 380ma n-channel small signal mosfet - 60v 2n7002klt1 p 4
typical electrical characteristics figure 9. diode forward voltage vs. current v sd , source ? to ? drain voltage (v) i s , source current (a) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 2 t j = 150 o c t j =25 o c 2014.11 www.willas.com.tw rev. >0 380ma n-channel small signal mosfet - 60v 2n7002klt1 p 5
outline drawing dimensions in inches and (millimeters) sot-23 rev. e .080(2.04) .070(1.78) .1 02 (2. 64 ) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .0 49 (1. 25 ) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) .95 typ 2014.11 www.willas.com.tw rev. >0 380ma n-channel small signal mosfet - 60v 2n7002klt1 p 6
suggested soldering pad layout sot-23 reva dimensions in inches and (millimeters) 0.0435 (1.10) (1.10) 0.0435 0.0315 (0.80) (0.90) 0.0355 2014.11 www.willas.com.tw rev. >0 380ma n-channel small signal mosfet - 60v 2n7002klt1 p 7
ordering information: ? device? pn? packing ? 2n7002klt1?\t (1) h (2) \ ws ? tape&reel: ? 3 ? k pcs/reel ? note: ? (1) ? packing ? code, ? tape ? & ? reel ? (2) ? halog en ? free ? product ? for ? packing ? code ? suffix ? ?h? ? ???? ? ? ? packing *** disclaimer *** willas reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. willas or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. data sheet specifications and its information contained are intended to provide a product description only. "typical" parameters which may be included on willas data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. willas does not assume any liability arising out of the application or use of any product or circuit. this is the preliminary spec ification . willas products are not designed, intended or authorized for use in medical, life - saving implant or other applications intended for life - sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of willas . customers using or selling willas components for use in such applications do so at their own risk a nd shall agree to fully indemnify willas inc and its subsidiaries harmless against all claims, damages and expenditures . 2014.11 >0 380ma n-channel small signal mosfet - 60v 2n7002klt1 p 8
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